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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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SOT 223 SCR
Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors
PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing. * * * * * Sensitive Gate Trigger Current Blocking Voltage to 600 Volts Glass Passivated Surface for Reliability and Uniformity Surface Mount Package Devices Supplied on 1 K Reel
MCR08BT1 Series*
*Motorola preferred devices
SCR 0.8 AMPERE RMS 200 thru 600 Volts
CASE 318E-04 (SOT-223) STYLE 10
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (1/2 Sine Wave, RGK = 1000 , TJ = 25 to 110C) MCR08BT1 MCR08DT1 MCR08MT1 On-State Current RMS (TC = 80C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 25C) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power, Forward, TA = 25C Average Gate Power (TC = 80C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg TL Symbol VDRM, VRRM 200 400 600 0.8 10 0.4 0.1 0.01 -40 to +110 -40 to +150 260 Amps Amps A2s Watts Watts C C C Value Unit Volts
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient PCB Mounted per Figure 1 Thermal Resistance, Junction to Tab Measured on Anode Tab Adjacent to Epoxy Symbol RJA RJT Max 156 25 Unit C/W C/W
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data (c) Motorola, Inc. 1995
1
MCR08BT1 Series
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted, RGK = 1 K)
Characteristic Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, RGK = 1000 ) Maximum On-State Voltage (Either Direction)* (IT = 1.0 A Peak, TA = 25C) Gate Trigger Current (Continuous dc) (Anode Voltage = 7.0 Vdc, RL = 100 ) Holding Current (VD = 7.0 Vdc, Initializing Current = 20 mA, RGK = 1000 ) Gate Trigger Voltage (Continuous dc) (Anode Voltage = 7.0 Vdc, RL = 100 ) Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC = 110C, RGK = 1000 , Exponential Method) * Pulse Test: Pulse Width 300 s, Duty Cycle 2%. TJ = 25C TJ = 110C VTM IGT IH Symbol IDRM, IRRM -- -- -- -- -- -- -- -- -- -- 10 200 1.7 200 5.0 Min Typ Max Unit A A Volts A mA
VGT dv/dt
-- 10
-- --
0.8 --
Volts V/s
0.15 3.8 0.079 2.0 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 inches mm 0.091 2.3 0.244 6.2
0.984 25.0
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY
0.096 2.44 0.059 1.5
0.096 2.44 0.059 1.5
0.096 2.44
0.472 12.0
Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223
2
Motorola Thyristor Device Data
MCR08BT1 Series
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 10 R JA , JUNCTION TO AMBIENT THERMAL RESISTANCE, ( C/W) 160 150 140 130 120 110 100 90 80 70 60 50 40 30 TYPICAL MAXIMUM DEVICE MOUNTED ON FIGURE 1 AREA = L2 PCB WITH TAB AREA AS SHOWN L
1.0
L 4 123
0.1 TYPICAL AT TJ = 110C MAX AT TJ = 110C MAX AT TJ = 25C 0 1.0 2.0 3.0 4.0 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
MINIMUM FOOTPRINT = 0.076 cm2 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
0.01
FOIL AREA (cm2)
Figure 2. On-State Characteristics
Figure 3. Junction to Ambient Thermal Resistance versus Copper Tab Area
110 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 1.0 cm2 FOIL, 50 OR 60 Hz HALFWAVE 180 80 70 60 50 40 30 =
CONDUCTION ANGLE
110 100 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 50 OR 60 Hz HALFWAVE 90 80 70 60 50 40 30 20 0 0.1 0.2 0.3 0.4 0.5 120 = 30 60 90 dc 180
ANGLE
= CONDUCTION
100 90
dc
120 = 30 60 90
20
0
0.1
0.2
0.3
0.4
0.5
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature
110 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 100 90 80 70 90 60 50
= CONDUCTION
ANGLE
Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature
110 dc T(tab) , MAXIMUM ALLOWABLE TAB TEMPERATURE ( C) 50 OR 60 Hz HALFWAVE 180 = 30 60 90 120
dc
PAD AREA = 4.0 cm2, 50 OR 60 Hz HALFWAVE 180
= 30 60
120
= CONDUCTION
ANGLE
0
0.1
0.2
0.3
0.4
0.5
85
0
0.1
0.2
0.3
0.4
0.5
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature
Figure 7. Current Derating Reference: Anode Tab
Motorola Thyristor Device Data
3
MCR08BT1 Series
1.0 0.9 MAXIMUM AVERAGE POWER P(AV),DISSIPATION (WATTS) 0.8 = 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 120 180 dc
CONDUCTION ANGLE
1.0 = 30 60 90 r T , TRANSIENT THERMAL RESISTANCE NORMALIZED
0.1
0.01 0.0001
0.001
0.01
0.1
1.0
10
100
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
t, TIME (SECONDS)
Figure 8. Power Dissipation
VGT , GATE TRIGGER VOLTAGE (VOLTS) 0.7 VAK = 7.0 V RL = 140 RGK = 1.0 k 2.0
Figure 9. Thermal Response Device Mounted on Figure 1 Printed Circuit Board
0.5
I H , HOLDING CURRENT (NORMALIZED)
0.6
VAK = 7.0 V RL = 3.0 k RGK = 1.0 k 1.0
0.4
0.3 -40
-20
0
20
40
60
80
110
0 -40
-20
0
20
40
60
80
110
TJ, JUNCTION TEMPERATURE, (C)
TJ, JUNCTION TEMPERATURE, (C)
Figure 10. Typical Gate Trigger Voltage versus Junction Temperature
0.7 V GT , GATE TRIGGER VOLTAGE (VOLTS) 0.65 0.6 0.55 0.5 0.45 0.4 0.35 0.3 0.1 1.0 10 100 1000 VAK = 7.0 V RL = 140 TJ = 25C 1000 I GT , GATE TRIGGER CURRENT ( A)
Figure 11. Typical Normalized Holding Current versus Junction Temperature
RGK = 1000 , RESISTOR CURRENT INCLUDED
100 VAK = 7.0 V RL = 140 10 WITHOUT GATE RESISTOR
1.0 -40
-20
0
20
40
60
80
110
IGT, GATE TRIGGER CURRENT (A)
TJ, JUNCTION TEMPERATURE (C)
Figure 12. Typical Range of VGT versus Measured IGT
Figure 13. Typical Gate Trigger Current versus Junction Temperature
4
Motorola Thyristor Device Data
MCR08BT1 Series
100 TJ = 25C 10 STATIC dv/dt (V/ S) IGT = 48 A 10000 5000 IH , HOLDING CURRENT (mA) 1000 500 100 50 10 5.0 1.0 0.5 0.1 1.0 10 100 1000 10,000 100,000 0.1 10 100 1000 125 110 75 10,000 100,000 50 TJ = 25 Vpk = 400 V
IGT = 7 A 1.0
RGK, GATE-CATHODE RESISTANCE (OHMS)
RGK, GATE-CATHODE RESISTANCE (OHMS)
Figure 14. Holding Current Range versus Gate-Cathode Resistance
10000 1000 500 STATIC dv/dt (V/ S) 100 50 500 V 10 5.0 1.0 10 100 1000 10,000 400 V 50 V
Figure 15. Exponential Static dv/dt versus Junction Temperature and Gate-Cathode Termination Resistance
10000
300 V 200 V 100 V
TJ = 110C 1000 500 STATIC dv/dt (V/ S) 100 50 10 5.0 1.0 0.01
TJ = 110C 400 V (PEAK)
RGK = 100
RGK = 1.0 k
RGK = 10 k 0.1 1.0 10 100 CGK, GATE-CATHODE CAPACITANCE (nF)
RGK, GATE-CATHODE RESISTANCE (OHMS)
Figure 16. Exponential Static dv/dt versus Peak Voltage and Gate-Cathode Termination Resistance
Figure 17. Exponential Static dv/dt versus Gate-Cathode Capacitance and Resistance
10000 1000 500 STATIC dv/dt (V/ S) 100 50 IGT = 70 A 10 5.0 1.0 10 100 IGT = 15 A 1000 10,000 100,000 IGT = 5 A IGT = 35 A
GATE-CATHODE RESISTANCE (OHMS)
Figure 18. Exponential Static dv/dt versus Gate-Cathode Termination Resistance and Product Trigger Current Sensitivity
Motorola Thyristor Device Data
5
MCR08BT1 Series
PACKAGE DIMENSIONS
A F
STYLE 10: PIN 1. 2. 3. 4.
4
NOTES: 2 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3 CONTROLLING DIMENSION: INCH. CATHODE ANODE GATE ANODE INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30
S
1 2 3
B
D L G J C 0.08 (0003) H M K
CASE 318E-04 (SOT-223)
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
6
*MCR08BT1/D*
Motorola Thyristor Device Data
MCR08BT1/D

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